SSS2309 p-channel enhancement mode mosfet product summary p r o d u c t s u m m a r y v ds (v) i d (a) -20v -2.3a r ds(on) (m ) max 130 @v gs = -4.5v 190 @v gs = -2.5v south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 1 of 7 1 o f 7 absolute maximum ratings (t a b s o l u t e m a x i m u m r a t i n g s ( t a = 25 c unless otherwise noted) = 2 5 c u n l e s s o t h e r w i s e n o t e d ) thermal characteristics t h e r m a l c h a r a c t e r i s t i c s parameter symbol limit unit o drain-source voltage gate-source voltage drain current-continuous @ t j = 25 c -pulsed drain-source diode forward current maximum power dissipation operating junction and storage temperature range thermal resistance, junction-to-ambient o a a a b v ds v gs i d i dm i s p d t j , t stg r ja -20 v v a a a c/w w c o o 10 - + -2.3 -8 -1.25 1.25 -55 to 150 100 sot-23 d g s d g s features ?5p super high dense cell design for low r ds(on) . ?5p rugged and reliable. ?5p sot-23 package.
SSS2309 south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 2 of 7 electrical characteristics (t e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 25 c unless otherwise noted) = 2 5 c u n l e s s o t h e r w i s e n o t e d ) o unit symbol parameter condition min typ max c zero gate voltage drain current drain-source breakdown voltage gate-body leakage gate threshold voltage drain-source on-state resistance bv dss i dss i gss v gs(th) r ds(on) v gs =0v, i d =-250 ? a v ds =-16v, v gs =0v v gs = ? 10v, v ds =0v v ds =v gs i d =-250 ? a v gs =-4.5v, i d =-2.3a v gs =-2.5v, i d =-2.0a m ? v v ? a na -20 1 ? 100 -1.5 130 190 -0.5 on-state drain current forward transconductance turn-on delay time rise time turn-off delay time fall time i d(on) g fs t d(on) t r t d(off) t f v ds =-5v, v gs =-4.5v v ds =-5v, i d =-2a v dd =-10v, v gs =-4.5v, r l =10 ? -5 5 11 141 56 10 ns p f s a input capacitance output capacitance reverse transfer capacitance c iss c oss c rss v ds =-15v v gs =0v f=1.0mhz 355 78 37 total gate charge q g 3.5 i d =-1a, r gen =6 ? , nc -1 v -1.2 -0.8 0.5 1 v gs =0v, i d =-1.25a i d =-2.3a, v gs =-4.5v v sd q gs q gd diode forward voltage gate-source charge gate-drain charge v ds =-10v, notes j a. surface mounted on fr4 board, t <10 sec. b. pulse test j pulse width < 300 ? s, duty cycle < 2%. c. guaranteed by design, not subject to production testing. - --
SSS2309 south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 3 of 7 -v ds , drain-to-source voltage (v) -i d , drain current (a) figure 1. output characteristics 0 1 2 3 4 5 6 20 16 12 8 4 0 -v gs = 2v -v gs , gate-to-source voltage (v) -i d , drain cu rrent (a) figure 2. thansfer characteristics 0 0.3 0.6 0.9 1.2 1.5 1.8 25 20 15 10 5 0 -55 c o 25 c o tj = 125 c o r ds(on), on-resistance normalized ( ? ) -55 -25 0 25 50 75 100 125 2.2 1.8 1.4 1.0 0.6 0.2 0 figure 4. on-resistance variation with temperature v gs = -4.5v t j , junction tempertature ( c) o v gs = -2.3a -v ds , drain-to-source voltage (v) c, capacitance (pf) figure 3. capacitance 0 5 10 15 20 25 30 ciss coss crss 500 0 400 300 200 100 vth, normalized gate-source threshold voltage tj , junction temperature ( c) figure 5. gate threshold variation with temperature o -50 -25 0 25 50 75 100 125 v ds = v gs i d = -250 ? a 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 bv dss , normalized drain-source breakdown voltag e figure 6. breakdown voltage variation with temperature tj , junction temperature ( c) o -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d = -250 ? a -v gs = 3v -v gs = 4v -v gs = 5v -v gs = 10, 9, 8, 7, 6v
SSS2309 south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 4 of 7 -i ds , drain-source current (a) g fs, transconductance (s) 0 5 10 15 20 25 figure 7. transconductance variation with drain current v ds = -5v -i s , source-drain current (a) 20.0 -v sd , body diode forward voltage (v) figure 8. body diode forward voltage variation with source current 0.4 0.8 1.2 1.6 2.0 2.4 -v gs , gate to source voltage (v) figure 9. gate charge qg , total gate charge (nc) 0 0.5 1 1.5 2 2.5 3 3.5 4 5 4 3 2 1 0 v ds = -4.5v i d = -2.3a i d , drain current (a) 0.01 -v sd , drain-to-source voltage (v) figure 10. maximum safe operating area 0.1 1 10 20 50 50 10 1 0.1 v gs = -4.5v single pulse t c = 25 c o r ds(on) limit 9 7.5 6 4.5 3 1.5 0 10.0 0.0 t j = 25 c o 10ms 100ms 1s dc 1.0
SSS2309 south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 5 of 7 figure 11. switching test circuit v gs r gen v out v dd v in d r l g s figure 12. switching waveforms inverted pulse width t r t d(on) v out v in t on t off t d(off) t f 10% 50% 50% 90% 10% 90% 10% 90% figure 13. normalized thermal transient impedance curve t1 t2 p dm 1. r ja(t) = r(t)*r ja 2. r ja = see datasheet 3. t jm - t a = p dm *r ja(t) 4. duty cycle, d = t1/t2 1 10 -4 10 -3 10 -2 10 -1 10 -5 0.01 1 0.1 10 r (t), normalized effective transient thermal impedance duty cycle = 0.5 square wave pulse duration (sec) 10 10 2 10 3 0.2 0.1 0.0.5 0.02 0.01 single pulse
SSS2309 package outline dimensions south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 6 of 7 sot-23 a b g l f c h d e symbols s y m b o l s millimeters m i l l i m e t e r s inches i n c h e s min. m i n . max. m a x . min. m i n . max. m a x . a b c d e f g h i j l m 2.70 0.122 0.106 0.55 0.45 0.10 0 0.50 0.35 1.60 1.40 2.80 2.40 3.10 10 0 0.045 0.033 1.15 0.85 - 0.016 - 0.40 0.008 0.004 0.20 0.10 0.051 0.039 1.30 1.00 0.075 ref. 1.90 ref. 0.022 0.018 0.004 0 0.063 0.020 0.014 0.055 0.110 0.094 o o o o 0 10 j m i
SSS2309 carrier tape & reel dimensions south sea semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. south sea semiconductor, august 2005 (rev 2.0) 7 of 7 sot-23 p1 feeding direction p2 b0 a0 p0 d0 e1 e2 e a d1 b0 k0 package p a c k a g e a0 a 0 b0 b 0 k0 k 0 d0 d 0 d1 d 1 e e1 e 1 e2 e 2 p0 p 0 p1 p 1 p2 p 2 t sot-23 3.20 3.00 1.33 1.00 1.50 8.00 1.75 3.50 4.00 4.00 2.00 0.20 0.10 0.10 0.10 0.25 0.10 0.10 0.30 0.10 0.05 0.10 0.10 0.05 0.02 + _ + _ + _ + _ + _ + _ + _ + _ + _ ++ + _ ? ? ? unit j mm g r v w m n w1 s k h unit j mm tape size t a p e s i z e reel size r e e l s i z e m n w w1 w 1 h k s g r v ? 178 ?? ? ? + _ + _ + _ + _ + _ + _ 8mm 178 60 1 1 9.0 0.5 12.0 0.5 13.5 0.5 10.5 2.0 0.5 10.0 5.0 18.0
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